Please use this identifier to cite or link to this item:
|Title:||Epitaxial growth and characterization of graphene on free-standing polycrystalline 3C-SiC||Authors:||Huang, H.
Liang Wong, S.
Qiang Luo, Z.
Xiang Shen, Z.
Shen Wee, A.T.
|Issue Date:||1-Jul-2011||Citation:||Huang, H., Liang Wong, S., Tin, C.-C., Qiang Luo, Z., Xiang Shen, Z., Chen, W., Shen Wee, A.T. (2011-07-01). Epitaxial growth and characterization of graphene on free-standing polycrystalline 3C-SiC. Journal of Applied Physics 110 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3602993||Abstract:||The epitaxial growth of graphene on inexpensive, commercially available, free-standing polycrystalline 3 C-SiC has been achieved by solid state graphitization in ultrahigh vacuum. The structural and electronic properties of such epitaxial graphene (EG) have been explored by Raman spectroscopy, scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS). The Raman results show that the grown EG is compressively stressed. The quality of such EG is similar to that on single-crystalline hexagonal SiC substrates. The STM measurements show that the EG grown on polycrystalline SiC presents atomically smooth surfaces across large regions of the underlying SiC substrate with some nanometer-scale features, such as one-dimensional (1-D) ridges, 1-D grain boundaries, and graphene in different stacking sequences. The STS measurements reveal the electronic properties of such EG at an atomic scale. Our approach suggests a more inexpensive way to grow high quality and large scale graphene and represents a promising step toward commercialization of graphene-based electronics. © 2011 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/76129||ISSN:||00218979||DOI:||10.1063/1.3602993|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.