Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.orgel.2010.06.014
Title: Embedded organic hetero-junction and negative-differential-resistance photocurrent based on bias-assisted natural-drying of organic drops
Authors: Xie, X.N. 
Wang, Y.
Gao, X. 
Lee, K.K.
Sow, C.H. 
Loh, K.P. 
Wee, A.T.S. 
Keywords: Bias-assissted drop casting
Organic hetero-junction
Photo current negative differential resistance
Issue Date: Sep-2010
Citation: Xie, X.N., Wang, Y., Gao, X., Lee, K.K., Sow, C.H., Loh, K.P., Wee, A.T.S. (2010-09). Embedded organic hetero-junction and negative-differential-resistance photocurrent based on bias-assisted natural-drying of organic drops. Organic Electronics: physics, materials, applications 11 (9) : 1543-1548. ScholarBank@NUS Repository. https://doi.org/10.1016/j.orgel.2010.06.014
Abstract: This work reports a bias-assisted natural-drying method in film drop-casting for the formation of an interfacial layer inside the bulk organic film. The natural-drying facilitates phase segregation in the polymer blend, while the simultaneous substrate bias application induces host electronic states in the interfacial layer. Consequently, an embedded organic hetero-junction is formed between the interfacial layer and bulk film. The hetero-junction not only enhances the separation of photoexcited electron-hole (ep-hp) pairs, but also allows for the selective storage and extraction of photocarriers through the bias-induced host states. Unusual photocurrent with negative-differential- resistance (NDR) is thus obtained for the first time for organic optoelectronic devices. The typical peak-to-valley ratio of the NDR peak is ≥500, and the NDR behavior is stable for prolonged photocurrent measurements. The bias-assisted natural-drying method is simple and cost-effective, and can be used as a new approach to the design and control of organic interfaces. © 2010 Elsevier B.V. All rights reserved.
Source Title: Organic Electronics: physics, materials, applications
URI: http://scholarbank.nus.edu.sg/handle/10635/76088
ISSN: 15661199
DOI: 10.1016/j.orgel.2010.06.014
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