Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevLett.100.186601
Title: Direct evidence for delocalization of charge carriers at the fermi level in a doped conducting polymer
Authors: Zhuo, J.-M. 
Zhao, L.-H.
Chia, P.-J. 
Sim, W.-S. 
Friend, R.H. 
Ho, P.K.H. 
Issue Date: 7-May-2008
Citation: Zhuo, J.-M., Zhao, L.-H., Chia, P.-J., Sim, W.-S., Friend, R.H., Ho, P.K.H. (2008-05-07). Direct evidence for delocalization of charge carriers at the fermi level in a doped conducting polymer. Physical Review Letters 100 (18) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevLett.100.186601
Abstract: The infrared absorption spectrum of the polaron charges at the Fermi level EF in a heavily p-doped conducting poly(3,4-ethylenedioxythiophene)- poly(styrenesulfonic acid) film has been measured using interferogram-modulated Fourier-transform charge-modulation spectroscopy. The spectrum indicates softer phonons and weaker electron-phonon coupling riding on a strongly redshifted Drude-like electronic transition, different from the population-averaged "bulk" spectrum. This provides direct evidence that the EF holes are sufficiently delocalized even in such disordered materials to reside in an energy continuum (band states) while the rest of the hole population resides in self-localized gap states. © 2008 The American Physical Society.
Source Title: Physical Review Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/75954
ISSN: 00319007
DOI: 10.1103/PhysRevLett.100.186601
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