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|Title:||Critical crystal growth of graphene on dielectric substrates at low temperature for electronic devices||Authors:||Wei, D.
|Keywords:||chemical vapor deposition
scanning probe microscopy
|Issue Date:||23-Dec-2013||Citation:||Wei, D., Lu, Y., Han, C., Niu, T., Chen, W., Wee, A.T.S. (2013-12-23). Critical crystal growth of graphene on dielectric substrates at low temperature for electronic devices. Angewandte Chemie - International Edition 52 (52) : 14121-14126. ScholarBank@NUS Repository. https://doi.org/10.1002/anie.201306086||Abstract:||Born at its final resting place: Moderate etching by a hydrogen plasma during plasma-enhanced chemical vapor deposition led to a critical equilibrium state of graphene edge growth in which graphene hexagonal single crystals or continuous graphene films were produced directly on dielectric substrates at 400 °C without a catalyst (see picture). The direct use of the resulting high-quality graphene in devices avoids troublesome transfer processes. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.||Source Title:||Angewandte Chemie - International Edition||URI:||http://scholarbank.nus.edu.sg/handle/10635/75835||ISSN:||14337851||DOI:||10.1002/anie.201306086|
|Appears in Collections:||Staff Publications|
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