Please use this identifier to cite or link to this item: https://doi.org/10.1002/anie.201306086
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dc.titleCritical crystal growth of graphene on dielectric substrates at low temperature for electronic devices
dc.contributor.authorWei, D.
dc.contributor.authorLu, Y.
dc.contributor.authorHan, C.
dc.contributor.authorNiu, T.
dc.contributor.authorChen, W.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-06-23T05:35:14Z
dc.date.available2014-06-23T05:35:14Z
dc.date.issued2013-12-23
dc.identifier.citationWei, D., Lu, Y., Han, C., Niu, T., Chen, W., Wee, A.T.S. (2013-12-23). Critical crystal growth of graphene on dielectric substrates at low temperature for electronic devices. Angewandte Chemie - International Edition 52 (52) : 14121-14126. ScholarBank@NUS Repository. https://doi.org/10.1002/anie.201306086
dc.identifier.issn14337851
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/75835
dc.description.abstractBorn at its final resting place: Moderate etching by a hydrogen plasma during plasma-enhanced chemical vapor deposition led to a critical equilibrium state of graphene edge growth in which graphene hexagonal single crystals or continuous graphene films were produced directly on dielectric substrates at 400 °C without a catalyst (see picture). The direct use of the resulting high-quality graphene in devices avoids troublesome transfer processes. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/anie.201306086
dc.sourceScopus
dc.subjectchemical vapor deposition
dc.subjectcrystal growth
dc.subjectgraphene
dc.subjectnanomaterials
dc.subjectscanning probe microscopy
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1002/anie.201306086
dc.description.sourcetitleAngewandte Chemie - International Edition
dc.description.volume52
dc.description.issue52
dc.description.page14121-14126
dc.description.codenACIEF
dc.identifier.isiut000328531100043
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