Please use this identifier to cite or link to this item:
|Title:||Atomic hydrogen beam etching of carbon superstructures on 6H-SiC (0001) studied by reflection high-energy election diffration||Authors:||Xie, X.N.
Reflection high energy electron diffraction
|Issue Date:||Mar-2001||Citation:||Xie, X.N., Lim, R., Li, J., Lin, S.F.Y., Loh, K.P. (2001-03). Atomic hydrogen beam etching of carbon superstructures on 6H-SiC (0001) studied by reflection high-energy election diffration. Diamond and Related Materials 10 (3-7) : 1218-1223. ScholarBank@NUS Repository. https://doi.org/10.1016/S0925-9635(00)00398-8||Abstract:||A route for the regeneration of smooth √3 × √3 R30 face on 6H-SiC(0001) by atomic hydrogen beam etching following the carbonization of the SiC surface at high temperatures had been investigated. The various stages during the segregation of carbonaceous super-structures at high temperatures as well as the layer-by-layer restructuring of the 6H-SiC(0001) surface by atomic H beam were studied by reflection high energy electron diffraction (RHEED). A smooth silicate-terminated √3 × √3 R30 surface could be obtained after hydrogen-plasma beam treatment at 800°C. Annealing the √3 × √3 R30 face to 900°C readily resulted in the segregation of 1 x 1 graphite islands on the surface, with the basis vectors of the graphite unit cell rotated 30° with respect to the bulk SiC. Further annealing to temperatures between 1000 and 1200°C resulted in the coalescence of the graphite islands to form an epitaxial layer, which adopted an incommensurate 6√3 × 6√3 R30-C structure with respect to the bulk. The epitaxial 6√3 × 6√3 R30-C layer acted as a template for the further growth of smooth single-crystalline graphite multilayers upon prolonged annealing. Atomic force microscopic (AFM) analysis revealed that the epitaxial graphite formed by this method was atomically smooth. Re-exposing the graphite-covered surface to a second hydrogen-plasma treatment readily converted the carbonized surface to a silicate-terminated √3 × √3 R30 face. The layer-by-layer etching mechanism of the carbonized SiC by the atomic-H beam source constituted an effective route for the regeneration of the smooth silicon face. © 2001 Elsevier Science B.V. All rights reserved.||Source Title:||Diamond and Related Materials||URI:||http://scholarbank.nus.edu.sg/handle/10635/75634||ISSN:||09259635||DOI:||10.1016/S0925-9635(00)00398-8|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 11, 2019
WEB OF SCIENCETM
checked on Nov 11, 2019
checked on Oct 27, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.