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|Title:||Atomic hydrogen beam etching of carbon superstructures on 6H-SiC (0001) studied by reflection high-energy election diffration||Authors:||Xie, X.N.
Reflection high energy electron diffraction
|Issue Date:||Mar-2001||Citation:||Xie, X.N., Lim, R., Li, J., Lin, S.F.Y., Loh, K.P. (2001-03). Atomic hydrogen beam etching of carbon superstructures on 6H-SiC (0001) studied by reflection high-energy election diffration. Diamond and Related Materials 10 (3-7) : 1218-1223. ScholarBank@NUS Repository. https://doi.org/10.1016/S0925-9635(00)00398-8||Abstract:||A route for the regeneration of smooth √3 × √3 R30 face on 6H-SiC(0001) by atomic hydrogen beam etching following the carbonization of the SiC surface at high temperatures had been investigated. The various stages during the segregation of carbonaceous super-structures at high temperatures as well as the layer-by-layer restructuring of the 6H-SiC(0001) surface by atomic H beam were studied by reflection high energy electron diffraction (RHEED). A smooth silicate-terminated √3 × √3 R30 surface could be obtained after hydrogen-plasma beam treatment at 800°C. Annealing the √3 × √3 R30 face to 900°C readily resulted in the segregation of 1 x 1 graphite islands on the surface, with the basis vectors of the graphite unit cell rotated 30° with respect to the bulk SiC. Further annealing to temperatures between 1000 and 1200°C resulted in the coalescence of the graphite islands to form an epitaxial layer, which adopted an incommensurate 6√3 × 6√3 R30-C structure with respect to the bulk. The epitaxial 6√3 × 6√3 R30-C layer acted as a template for the further growth of smooth single-crystalline graphite multilayers upon prolonged annealing. Atomic force microscopic (AFM) analysis revealed that the epitaxial graphite formed by this method was atomically smooth. Re-exposing the graphite-covered surface to a second hydrogen-plasma treatment readily converted the carbonized surface to a silicate-terminated √3 × √3 R30 face. The layer-by-layer etching mechanism of the carbonized SiC by the atomic-H beam source constituted an effective route for the regeneration of the smooth silicon face. © 2001 Elsevier Science B.V. All rights reserved.||Source Title:||Diamond and Related Materials||URI:||http://scholarbank.nus.edu.sg/handle/10635/75634||ISSN:||09259635||DOI:||10.1016/S0925-9635(00)00398-8|
|Appears in Collections:||Staff Publications|
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