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|Title:||Patterning light emitting porous silicon using helium beam irradiation||Authors:||Teo, E.J.
|Keywords:||Ion beam irradiation
Light emitting porous silicon
|Issue Date:||2006||Citation:||Teo, E.J., Breese, M.B.H., Bettiol, A.A., Champeaux, F., Blackwood, D.J. (2006). Patterning light emitting porous silicon using helium beam irradiation. Proceedings of SPIE - The International Society for Optical Engineering 6183 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.662502||Abstract:||High energy helium beam has been utilized to pattern silicon prior to electrochemical etching in hydrofluoric acid. Photoluminescence (PL) studies carried out on medium resistivity silicon showed that the PL wavelength of the irradiated regions is continuously red-shifted by up to 150 nm with increasing dose. On the lower resistivity silicon, the intensity is shown to increase by more than twenty times with dose. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) have been used to determine the surface morphology of the irradiated structure. This technique is potentially important for producing an integrated silicon based optoelectronic device.||Source Title:||Proceedings of SPIE - The International Society for Optical Engineering||URI:||http://scholarbank.nus.edu.sg/handle/10635/75245||ISBN:||081946239X||ISSN:||0277786X||DOI:||10.1117/12.662502|
|Appears in Collections:||Staff Publications|
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