Fabrication of nano-crystalline silicon thin film on flexible substrate by cathodic vacuum arc

Abstract

Nano-crystalline silicon has been fabricated by cathodic vacuum arc system from single crystalline silicon source. The silicon thin films were deposited at cryogenic temperature hence it is possible to deposit such films on plastic flexible substrates. Both p and n type silicon thin films can be deposited in situ without additional impurity doping process. Therefore, fabrication of thin film type p-n junction diode was achieved. This semiconductor device has potential application in thin film transistor and photovoltaic cells due to its highly crystalline properties (40∼70%). It has long-term stability after prolong solar illumination and higher electron mobility than amorphous silicon. Low temperature deposited nano-crystalline silicon thin film has attracted much attention due to applicable on low-cost substrate, like glass and flexible plastic substrate.