Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3120694
DC FieldValue
dc.titleAnnealing effects on ZnO/NiSi contact
dc.contributor.authorWei, R.
dc.contributor.authorGong, H.
dc.date.accessioned2014-06-19T09:33:46Z
dc.date.available2014-06-19T09:33:46Z
dc.date.issued2009
dc.identifier.citationWei, R.,Gong, H. (2009). Annealing effects on ZnO/NiSi contact. ECS Transactions 19 (3) : 129-135. ScholarBank@NUS Repository. <a href="https://doi.org/10.1149/1.3120694" target="_blank">https://doi.org/10.1149/1.3120694</a>
dc.identifier.isbn9781566777117
dc.identifier.issn19385862
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/75214
dc.description.abstractNiSi as the electrode of ZnO films was annealed for different temperatures. It was found that with the increase of the temperatures, although the structure quality of ZnO films does not change greatly, the optical properties of the films do indicate the introduction of the oxygen defects into ZnO films by annealing process. © The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.3120694
dc.sourceScopus
dc.subjectAnneal
dc.subjectNiSi
dc.subjectPhotoluminescence
dc.subjectRaman spectroscopy
dc.subjectZnO
dc.typeConference Paper
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1149/1.3120694
dc.description.sourcetitleECS Transactions
dc.description.volume19
dc.description.issue3
dc.description.page129-135
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

1
checked on Sep 24, 2021

Page view(s)

178
checked on Sep 23, 2021

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.