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|Title:||Annealing effects on ZnO/NiSi contact||Authors:||Wei, R.
|Issue Date:||2009||Citation:||Wei, R.,Gong, H. (2009). Annealing effects on ZnO/NiSi contact. ECS Transactions 19 (3) : 129-135. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3120694||Abstract:||NiSi as the electrode of ZnO films was annealed for different temperatures. It was found that with the increase of the temperatures, although the structure quality of ZnO films does not change greatly, the optical properties of the films do indicate the introduction of the oxygen defects into ZnO films by annealing process. © The Electrochemical Society.||Source Title:||ECS Transactions||URI:||http://scholarbank.nus.edu.sg/handle/10635/75214||ISBN:||9781566777117||ISSN:||19385862||DOI:||10.1149/1.3120694|
|Appears in Collections:||Staff Publications|
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