Please use this identifier to cite or link to this item:
Title: Annealing effects on ZnO/NiSi contact
Authors: Wei, R.
Gong, H. 
Keywords: Anneal
Raman spectroscopy
Issue Date: 2009
Citation: Wei, R.,Gong, H. (2009). Annealing effects on ZnO/NiSi contact. ECS Transactions 19 (3) : 129-135. ScholarBank@NUS Repository.
Abstract: NiSi as the electrode of ZnO films was annealed for different temperatures. It was found that with the increase of the temperatures, although the structure quality of ZnO films does not change greatly, the optical properties of the films do indicate the introduction of the oxygen defects into ZnO films by annealing process. © The Electrochemical Society.
Source Title: ECS Transactions
ISBN: 9781566777117
ISSN: 19385862
DOI: 10.1149/1.3120694
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Sep 8, 2019

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.