Please use this identifier to cite or link to this item: https://doi.org/10.1007/s00542-013-1740-0
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dc.titleReleasing high aspect ratio SU-8 microstructures using AZ photoresist as a sacrificial layer on metallized Si substrates
dc.contributor.authorLau, K.H.
dc.contributor.authorGiridhar, A.
dc.contributor.authorHarikrishnan, S.
dc.contributor.authorSatyanarayana, N.
dc.contributor.authorSinha, S.K.
dc.date.accessioned2014-06-19T05:39:36Z
dc.date.available2014-06-19T05:39:36Z
dc.date.issued2013-11
dc.identifier.citationLau, K.H., Giridhar, A., Harikrishnan, S., Satyanarayana, N., Sinha, S.K. (2013-11). Releasing high aspect ratio SU-8 microstructures using AZ photoresist as a sacrificial layer on metallized Si substrates. Microsystem Technologies 19 (11) : 1863-1871. ScholarBank@NUS Repository. https://doi.org/10.1007/s00542-013-1740-0
dc.identifier.issn09467076
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/73810
dc.description.abstractThis paper presents a successful method for releasing high aspect ratio SU-8 micro-structures by the use of positive photoresist (AZ 4620) as sacrificial layer. The AZ 4620 photoresist sacrificial layer was dissolved by the SU-8 developer (propylene glycol monomethyl ether acetate). Thus, this process reduces the need for complex microfabrication steps and equipments which are otherwise required in traditional methods using metal sacrificial layers. The current method is both cost-effective and time-effective because no additional releasing method or material is needed to remove the fabricated SU-8 structures. Further, the influence of surface energy on the adhesion between Si and SU-8 was demonstrated and metallic thin layer coating on Si was employed to further reduce the lift-off duration. The results obtained showed that the duration for lift-off of SU-8 structures from metal (Al) coated Si substrate is much lower (approximately 90 % time saving) and the surface morphology of the released structures has lesser micropore concentration compared to the process employing bare Si as the substrate. In both processes AZ 4620 was the sacrificial layer whereas the metalized Si substrate could be re-used. © 2013 Springer-Verlag Berlin Heidelberg.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/s00542-013-1740-0
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentMECHANICAL ENGINEERING
dc.description.doi10.1007/s00542-013-1740-0
dc.description.sourcetitleMicrosystem Technologies
dc.description.volume19
dc.description.issue11
dc.description.page1863-1871
dc.identifier.isiut000326106800023
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