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|Title:||Nanoindentation study of the sputtered Cu thin films for interconnect applications||Authors:||Srinivasarao, V.
|Issue Date:||2004||Citation:||Srinivasarao, V.,Jayaganthan, R.,Sekhar, V.N.,Mohankumar, K.,Tay, A.A.O.,Kripesh, V. (2004). Nanoindentation study of the sputtered Cu thin films for interconnect applications. Proceedings of 6th Electronics Packaging Technology Conference, EPTC 2004 : 343-347. ScholarBank@NUS Repository.||Abstract:||Copper films of different thicknesses of 0.1, 0.5, and 1 μm were deposited by DC magnetron sputtering on the adhesion promoting Ta layer deposited on the Silicon (100) wafer. The films were annealed in vacuum at temperature 200° C and their elastic modulus and hardness were measured by Nanoindentation technique. The influence of thickness and annealing temperature on the mechanical behavior of copper thin films is explored in the present work. © 2004 IEEE.||Source Title:||Proceedings of 6th Electronics Packaging Technology Conference, EPTC 2004||URI:||http://scholarbank.nus.edu.sg/handle/10635/73666||ISBN:||0780388216|
|Appears in Collections:||Staff Publications|
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