Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/72944
DC Field | Value | |
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dc.title | Structural and optical properties of GaN materials grown on Si by metalorganic chemical vapor deposition | |
dc.contributor.author | Chen, J.L. | |
dc.contributor.author | Feng, Z.C. | |
dc.contributor.author | Zhang, X. | |
dc.contributor.author | Chua, S.J. | |
dc.contributor.author | Hou, Y.T. | |
dc.contributor.author | Lin, J. | |
dc.date.accessioned | 2014-06-19T05:13:45Z | |
dc.date.available | 2014-06-19T05:13:45Z | |
dc.date.issued | 1999 | |
dc.identifier.citation | Chen, J.L.,Feng, Z.C.,Zhang, X.,Chua, S.J.,Hou, Y.T.,Lin, J. (1999). Structural and optical properties of GaN materials grown on Si by metalorganic chemical vapor deposition. Proceedings of SPIE - The International Society for Optical Engineering 3899 : 54-62. ScholarBank@NUS Repository. | |
dc.identifier.issn | 0277786X | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/72944 | |
dc.description.abstract | GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si (001) substrates with specially designed composite intermediate layers consisting of an ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. The structural and optical properties of these new grown materials were studied. X-ray diffraction (XRD), Raman scattering and Fourier transform infrared reflectance measurements confirmed their wurtzite structure. Scanning electron microscopy exhibited the single crystalline grain size up to approximately 2 μm. Photoluminescence showed strong GaN near edge emission, with only very weak deep defect-related emissions, for GaN films, and strong MQW emissions. The film surface morphology and material properties are improved by adjusting the growth conditions and buffer layer structural design. | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | PHYSICS | |
dc.contributor.department | ELECTRICAL ENGINEERING | |
dc.description.sourcetitle | Proceedings of SPIE - The International Society for Optical Engineering | |
dc.description.volume | 3899 | |
dc.description.page | 54-62 | |
dc.description.coden | PSISD | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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