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|Title:||Series resistance and effective channel mobility degradation in LDD NMOSFETs under hot-carrier stressing||Authors:||Oh, G.G.
|Issue Date:||1999||Citation:||Oh, G.G.,Chim, W.K.,Chan, D.S.H.,Lou, C.L. (1999). Series resistance and effective channel mobility degradation in LDD NMOSFETs under hot-carrier stressing. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 99-103. ScholarBank@NUS Repository.||Abstract:||With the ability to independently extract the series drain resistance and effective channel mobility from a single MOSFET device, the individual effect of these two parameters on the hot-carrier degradation in graded-drain nMOSFETs was separated and investigated. A self-limiting behaviour due to trapped charge and interface state generation was observed. A three-stage degradation model was proposed to explain the observed hot-carrier degradation behaviour.||Source Title:||Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/72913|
|Appears in Collections:||Staff Publications|
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