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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/72871
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dc.titleProcess variation during tunnel window formation and its impact on the reliability performance of FLOTOX EEPROM devices
dc.contributor.authorLai, K.-K.
dc.contributor.authorLim, P.-S.
dc.contributor.authorChim, W.-K.
dc.contributor.authorPan, Y.
dc.date.accessioned2014-06-19T05:12:55Z
dc.date.available2014-06-19T05:12:55Z
dc.date.issued2000
dc.identifier.citationLai, K.-K.,Lim, P.-S.,Chim, W.-K.,Pan, Y. (2000). Process variation during tunnel window formation and its impact on the reliability performance of FLOTOX EEPROM devices. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 196-199. ScholarBank@NUS Repository.
dc.identifier.isbn0780364309
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/72871
dc.description.abstractProcess variation in the buffered oxide etch (BOE) duration during tunnel window formation can cause floating-gate tunnel-oxide (FLOTOX) electrically erasable and programmable read-only memory (EEPROM) devices to exhibit enhanced window closure effect during write/erase endurance test. Electrical and physical characterisation of devices with insufficient BOE duration indicated the presence of a poor quality or "crabby" oxide region (exhibiting enhanced electron trapping) remaining after tunnel window formation before tunnel oxide growth. © 2000 IEEE.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
dc.description.page196-199
dc.identifier.isiutNOT_IN_WOS
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