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|Title:||Process variation during tunnel window formation and its impact on the reliability performance of FLOTOX EEPROM devices||Authors:||Lai, K.-K.
|Issue Date:||2000||Citation:||Lai, K.-K.,Lim, P.-S.,Chim, W.-K.,Pan, Y. (2000). Process variation during tunnel window formation and its impact on the reliability performance of FLOTOX EEPROM devices. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 196-199. ScholarBank@NUS Repository.||Abstract:||Process variation in the buffered oxide etch (BOE) duration during tunnel window formation can cause floating-gate tunnel-oxide (FLOTOX) electrically erasable and programmable read-only memory (EEPROM) devices to exhibit enhanced window closure effect during write/erase endurance test. Electrical and physical characterisation of devices with insufficient BOE duration indicated the presence of a poor quality or "crabby" oxide region (exhibiting enhanced electron trapping) remaining after tunnel window formation before tunnel oxide growth. © 2000 IEEE.||Source Title:||IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE||URI:||http://scholarbank.nus.edu.sg/handle/10635/72871||ISBN:||0780364309|
|Appears in Collections:||Staff Publications|
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