Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/72786
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dc.titleNew empirical model for GaAs FET in nonlinear circuit simulation
dc.contributor.authorCao, J.
dc.contributor.authorLin, F.
dc.contributor.authorKooi, P.S.
dc.contributor.authorLeong, M.S.
dc.date.accessioned2014-06-19T05:11:58Z
dc.date.available2014-06-19T05:11:58Z
dc.date.issued1997
dc.identifier.citationCao, J.,Lin, F.,Kooi, P.S.,Leong, M.S. (1997). New empirical model for GaAs FET in nonlinear circuit simulation. Asia-Pacific Microwave Conference Proceedings, APMC 2 : 517-520. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/72786
dc.description.abstractBy emphasizing the aspects of simplicity and accuracy for a GaAs FET modeling, a new empirical GaAs FET model is developed. Good agreements between simulated and measured data are obtained.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL ENGINEERING
dc.contributor.departmentINSTITUTE OF MICROELECTRONICS
dc.description.sourcetitleAsia-Pacific Microwave Conference Proceedings, APMC
dc.description.volume2
dc.description.page517-520
dc.description.coden00280
dc.identifier.isiutNOT_IN_WOS
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