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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/72705
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dc.titleIntegrated (automated) photon emission microscope and MOSFET characterization system for combined microscopic and macroscopic device analysis
dc.contributor.authorNg, T.H.
dc.contributor.authorChim, W.K.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorPhang, J.C.H.
dc.contributor.authorLiu, Y.Y.
dc.contributor.authorLou, C.L.
dc.contributor.authorLeang, S.E.
dc.contributor.authorTao, J.M.
dc.date.accessioned2014-06-19T05:11:04Z
dc.date.available2014-06-19T05:11:04Z
dc.date.issued1999
dc.identifier.citationNg, T.H.,Chim, W.K.,Chan, D.S.H.,Phang, J.C.H.,Liu, Y.Y.,Lou, C.L.,Leang, S.E.,Tao, J.M. (1999). Integrated (automated) photon emission microscope and MOSFET characterization system for combined microscopic and macroscopic device analysis. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 113-118. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/72705
dc.description.abstractThis article describes the design and performance of an integrated characterization system for the physical microscopic analysis and macroscopic reliability characterization of MOSFETs under hot-carrier stressing conditions. The system includes the photon emission microscopic localization of the photon emitting device(s), spectroscopic measurement of the emitted light, hot-carrier stressing and lifetime estimation, charge-pumping measurement and profiling, gated-diode measurement, capacitance-voltage measurement and flicker-noise characterization.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
dc.description.page113-118
dc.description.coden00234
dc.identifier.isiutNOT_IN_WOS
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