Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/72582
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dc.titleDirect-current measurements of interface traps and oxide charges in LDD pMOSFETs with an n-well structure
dc.contributor.authorJie, B.B.
dc.contributor.authorLi, M.F.
dc.contributor.authorLou, C.L.
dc.contributor.authorLo, K.F.
dc.contributor.authorChim, W.K.
dc.contributor.authorChan, D.S.H.
dc.date.accessioned2014-06-19T05:09:41Z
dc.date.available2014-06-19T05:09:41Z
dc.date.issued1997
dc.identifier.citationJie, B.B.,Li, M.F.,Lou, C.L.,Lo, K.F.,Chim, W.K.,Chan, D.S.H. (1997). Direct-current measurements of interface traps and oxide charges in LDD pMOSFETs with an n-well structure. Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA : 176-181. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/72582
dc.description.abstractA direct-current current-voltage (DCIV) technique for the measurement of interface traps and oxide charges in LDD pMOSFETs with n-well in p-substrate is demonstrated. The interface trap densities are monitored using the bulk current of the MOS transistor. The DCIV results for pMOSFETs after substrate hot carrier injection and channel hot carrier injection are presented and analyzed. There are two peaks in the DCIV spectrum after channel hot carrier injection, corresponding to hot-carrier-generated interface traps located in the channel region and the lightly-doped drain (LDD) region respectively. The stress-induced oxide charge results in the shifts of two peaks.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleProceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA
dc.description.page176-181
dc.description.coden00234
dc.identifier.isiutNOT_IN_WOS
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