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|Title:||Charging identification and compensation in the scanning electron microscope||Authors:||Wong, W.K.
|Issue Date:||1997||Citation:||Wong, W.K.,Thong, J.T.L.,Phang, J.C.H. (1997). Charging identification and compensation in the scanning electron microscope. Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA : 97-102. ScholarBank@NUS Repository.||Abstract:||Common charging artifacts in the Scanning Electron Microscope (SEM) are discussed. A novel method employing front-end control of the SEM beam voltage and scanning to achieve charging compensation was also discussed. Results show that the new technique is effective in reducing highly-negative charging as well as providing a means for the experimental measurement of charging using the electrostatic mirror.||Source Title:||Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/72520|
|Appears in Collections:||Staff Publications|
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