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|dc.title||Wafer level hermetic bonding using Sn/In and Cu/Ti/Au metallization|
|dc.identifier.citation||Yu, D.,Yan, L.,Lee, C.,Choi, W.K.,Thew, M.L.,Foo, C.K.,Lau, J.H. (2008). Wafer level hermetic bonding using Sn/In and Cu/Ti/Au metallization. 10th Electronics Packaging Technology Conference, EPTC 2008 : 767-772. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/EPTC.2008.4763525" target="_blank">https://doi.org/10.1109/EPTC.2008.4763525</a>|
|dc.description.abstract||A low temperature hermetic wafer bonding using In/Sn interlayer and Cu/Ti/Au metallization was investigated for MEMS and sensor packaging application. Bonding was performed in a vacuum wafer bonder at 180°C and 150°C for 20min under 5.5MPa. It is found that bonding at 180°C, voids free joints composed of high temperature intermetallic compounds (IMCs) were obtained with good hermeticity and reliability. However, bonding at 150°C, voids were generated along the seal joint which caused poor hermeticity comparing with that bonded at 180°C. After four kinds of reliability tests, i. e., Pressure cooker test, high humidity storage, high temperature storage, temperature cycling test, dies bonded at 180°C showed good reliability properties by hermeticity test and shear tests. Present results proved that high yield and low temperature hermetic bonding can be achieved by using Sn/In/Cu metallization with thin Ti as a buffer layer. © 2008 IEEE.|
|dc.contributor.department||ELECTRICAL & COMPUTER ENGINEERING|
|dc.description.sourcetitle||10th Electronics Packaging Technology Conference, EPTC 2008|
|Appears in Collections:||Staff Publications|
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