Please use this identifier to cite or link to this item: https://doi.org/10.1109/EPTC.2012.6507104
Title: Vacuum based wafer level encapsulation (WLE) of MEMS using physical vapor deposition (PVD)
Authors: Soon, B.W.
Singh, N.
Tsai, J.M.
Lee, C. 
Issue Date: 2012
Citation: Soon, B.W.,Singh, N.,Tsai, J.M.,Lee, C. (2012). Vacuum based wafer level encapsulation (WLE) of MEMS using physical vapor deposition (PVD). Proceedings of the 2012 IEEE 14th Electronics Packaging Technology Conference, EPTC 2012 : 342-345. ScholarBank@NUS Repository. https://doi.org/10.1109/EPTC.2012.6507104
Abstract: In this paper, we demonstrate wafer level encapsulation of MEMS using physical vapor deposition of aluminum (Al). A cavity area, which simulates the area of a MEMS device, is fully encapsulated by dual layer of amorphous silicon and Al. The encapsulation process takes place in the PVD chamber, thus the vacuum level in the sealed cavity is assumed to be high. The proposed processes are entirely CMOS compatible and readily deployed into any standard CMOS foundry and semiconductor wafer fabrication. © 2012 IEEE.
Source Title: Proceedings of the 2012 IEEE 14th Electronics Packaging Technology Conference, EPTC 2012
URI: http://scholarbank.nus.edu.sg/handle/10635/72146
ISBN: 9781467345514
DOI: 10.1109/EPTC.2012.6507104
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