Please use this identifier to cite or link to this item:
|Title:||Using probing techniques to identify and study high leakage issues in the development of 90nm process and below||Authors:||Hendarto, E.
|Issue Date:||2006||Citation:||Hendarto, E.,Mai, Z.,Tan, P.K.,Lek, A.,Lau, B.,Lam, J.,Chim, W.K. (2006). Using probing techniques to identify and study high leakage issues in the development of 90nm process and below. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 58-62. ScholarBank@NUS Repository. https://doi.org/10.1109/IPFA.2006.250997||Abstract:||The combined use of scanning probe microscope based techniques, namely conductive atomic force microscopy (C-AFM) and tunneling atomic force microscopy (TUNA), and nanoprobing technique is presented. In 90nm process and below, C-AFM identifies leakage by current mapping, while TUNA measures the current-voltage (I-V) curves of different contacts to study the integrity of individual contacts. Nanoprobing is used to obtain and compare the I- V characteristics of good and leaky transistors. © 2006 IEEE.||Source Title:||Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/72139||ISBN:||1424402069||DOI:||10.1109/IPFA.2006.250997|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 3, 2020
checked on May 31, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.