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Please use this identifier to cite or link to this item: https://doi.org/10.1093/ietele/e90-c.1.204
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dc.titleThermal effect simulation of GaN HFETs under CW and pulsed operation
dc.contributor.authorXu, J.
dc.contributor.authorYin, W.-Y.
dc.contributor.authorMao, J.
dc.contributor.authorLi, L.-W.
dc.date.accessioned2014-06-19T03:30:26Z
dc.date.available2014-06-19T03:30:26Z
dc.date.issued2007-01
dc.identifier.citationXu, J., Yin, W.-Y., Mao, J., Li, L.-W. (2007-01). Thermal effect simulation of GaN HFETs under CW and pulsed operation. IEICE Transactions on Electronics E90-C (1) : 204-207. ScholarBank@NUS Repository. https://doi.org/10.1093/ietele/e90-c.1.204
dc.identifier.issn09168524
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/72012
dc.description.abstractIn this paper, the thermal characteristic of the GaN HFETs has been analyzed using the hybrid finite element method (FEM). Both the steady and transient state thermal operations are quantitatively studied with the effects of temperature-dependent thermal conductivities of GaN and the substrate materials properly treated. The temperature distribution and the maximum temperatures of the HFETs operated under excitations of continuous-waves (CW) and pulsed-waves (PW) including double exponential shape PW such as electromagnetic pulse (EMP) and ultra-wideband (UWB) signal are studied and compared. Copyright © 2007 The Institute of Electronics, Information and Communication Engineers.
dc.sourceScopus
dc.subjectCW
dc.subjectGaN heterojunction field-effect transistors (HFETs)
dc.subjectMaximum temperature
dc.subjectPW
dc.subjectThermal simulation
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1093/ietele/e90-c.1.204
dc.description.sourcetitleIEICE Transactions on Electronics
dc.description.volumeE90-C
dc.description.issue1
dc.description.page204-207
dc.description.codenIELEE
dc.identifier.isiut000243703900035
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