Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.456841
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dc.titleThe fabrication of TiNi thin films by pulsed-laser deposition
dc.contributor.authorChen, X.
dc.contributor.authorLu, Y.
dc.contributor.authorRen, Z.
dc.contributor.authorZhu, S.
dc.date.accessioned2014-06-19T03:30:02Z
dc.date.available2014-06-19T03:30:02Z
dc.date.issued2002
dc.identifier.citationChen, X., Lu, Y., Ren, Z., Zhu, S. (2002). The fabrication of TiNi thin films by pulsed-laser deposition. Proceedings of SPIE - The International Society for Optical Engineering 4426 : 225-228. ScholarBank@NUS Repository. https://doi.org/10.1117/12.456841
dc.identifier.issn0277786X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/71978
dc.description.abstractTiNi shape memory alloy (SMA) thin films have been fabricated by pulsed-laser deposition (PLD) at different substrate temperatures. The stoichiometry, surface morphology and crystallinity of the films were characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM) and X-ray diffraction (XRD). The transformation behaviour and crystallization temperatures were investigated by differential scanning calorimetry (DSC). It is found that the Ni content of the deposited films ranges from 46.7 to 52.0 at.%. The films deposited at low temperature are amorphous. The crystallization temperature of the Ti-51.5 at.% Ni thin film is 449°C. The martensitic transformation temperature of the film is -20.8°C.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1117/12.456841
dc.sourceScopus
dc.subjectLaser ablation
dc.subjectPLD
dc.subjectShape memory alloy
dc.subjectThin film
dc.subjectTiNi
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1117/12.456841
dc.description.sourcetitleProceedings of SPIE - The International Society for Optical Engineering
dc.description.volume4426
dc.description.page225-228
dc.description.codenPSISD
dc.identifier.isiut000176422100049
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