Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/71898
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dc.titleSubstituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning free
dc.contributor.authorPark, C.S.
dc.contributor.authorCho, B.J.
dc.contributor.authorTang, L.J.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-06-19T03:29:05Z
dc.date.available2014-06-19T03:29:05Z
dc.date.issued2004
dc.identifier.citationPark, C.S.,Cho, B.J.,Tang, L.J.,Kwong, D.-L. (2004). Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning free. Technical Digest - International Electron Devices Meeting, IEDM : 299-302. ScholarBank@NUS Repository.
dc.identifier.issn01631918
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/71898
dc.description.abstractSubstituted aluminum (SA) metal gate on high-K gate dielectric is successfully demonstrated. Full substitution of polysilicon with Al is achieved in Ti/Al/polysilicon/HfA1ON gate structure by a low temperature annealing at 450°C. The SA gate on HfAlON dielectric shows a very low work function of 4.25 eV, which is well suitable for bulk nMOSFETs. The SA process is fully free from Fermi level pinning problem. In addition, the SA process also shows improved uniformity in leakage current distribution compared to fully silicided (FUSI) metal gate. © 2004 IEEE.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleTechnical Digest - International Electron Devices Meeting, IEDM
dc.description.page299-302
dc.description.codenTDIMD
dc.identifier.isiutNOT_IN_WOS
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