Please use this identifier to cite or link to this item:
|Title:||Strain engineering of ultra-thin silicon-on-insulator structures using ion implant||Authors:||Ding, Y.
|Issue Date:||2012||Citation:||Ding, Y.,Cheng, R.,Zhou, Q.,Du, A.,Daval, N.,Nguyen, B.-Y.,Yeo, Y.-C. (2012). Strain engineering of ultra-thin silicon-on-insulator structures using ion implant. 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings : 86-87. ScholarBank@NUS Repository. https://doi.org/10.1109/ISTDM.2012.6222470||Abstract:||We report a novel way of introducing strain in Ultra-Thin Body and Buried-Oxide (UTBB) SOI structures by Ge implant into the underlying Si substrate and the formation of localized SiGe regions underneath the buried oxide (BOX) by solid-phase epitaxy (SPE). The localized SiGe regions result in local deformation of the ultra-thin Si. Compressive strain of up to -0.55% and -1.2% were detected by Nano-Beam Diffraction (NBD) at the center and edge of an ultra-thin Si region with 50 nm width between two local SiGe regions. © 2012 IEEE.||Source Title:||2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/71873||ISBN:||9781457718625||DOI:||10.1109/ISTDM.2012.6222470|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 21, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.