Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3487536
DC FieldValue
dc.titleStrain engineering and junction design for tunnel field-effect transistor
dc.contributor.authorYeo, Y.-C.
dc.contributor.authorHan, G.
dc.contributor.authorYang, Y.
dc.contributor.authorGuo, P.
dc.date.accessioned2014-06-19T03:28:48Z
dc.date.available2014-06-19T03:28:48Z
dc.date.issued2010
dc.identifier.citationYeo, Y.-C., Han, G., Yang, Y., Guo, P. (2010). Strain engineering and junction design for tunnel field-effect transistor. ECS Transactions 33 (6) : 77-87. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3487536
dc.identifier.isbn9781566778251
dc.identifier.issn19385862
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/71872
dc.description.abstractWe examine technologies aimed at performance enhancement for silicon- or germanium based TFETs, including strain engineering, source/drain junction profile engineering, and use of heterojunction materials. Device and circuit simulation results will also be discussed. ©The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.3487536
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1149/1.3487536
dc.description.sourcetitleECS Transactions
dc.description.volume33
dc.description.issue6
dc.description.page77-87
dc.identifier.isiut000314957600007
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

12
checked on Dec 7, 2021

WEB OF SCIENCETM
Citations

10
checked on Nov 30, 2021

Page view(s)

90
checked on Dec 2, 2021

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.