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|Title:||Strain engineering and junction design for tunnel field-effect transistor||Authors:||Yeo, Y.-C.
|Issue Date:||2010||Citation:||Yeo, Y.-C., Han, G., Yang, Y., Guo, P. (2010). Strain engineering and junction design for tunnel field-effect transistor. ECS Transactions 33 (6) : 77-87. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3487536||Abstract:||We examine technologies aimed at performance enhancement for silicon- or germanium based TFETs, including strain engineering, source/drain junction profile engineering, and use of heterojunction materials. Device and circuit simulation results will also be discussed. ©The Electrochemical Society.||Source Title:||ECS Transactions||URI:||http://scholarbank.nus.edu.sg/handle/10635/71872||ISBN:||9781566778251||ISSN:||19385862||DOI:||10.1149/1.3487536|
|Appears in Collections:||Staff Publications|
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