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https://doi.org/10.1149/1.3487536
| Title: | Strain engineering and junction design for tunnel field-effect transistor | Authors: | Yeo, Y.-C. Han, G. Yang, Y. Guo, P. |
Issue Date: | 2010 | Citation: | Yeo, Y.-C., Han, G., Yang, Y., Guo, P. (2010). Strain engineering and junction design for tunnel field-effect transistor. ECS Transactions 33 (6) : 77-87. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3487536 | Abstract: | We examine technologies aimed at performance enhancement for silicon- or germanium based TFETs, including strain engineering, source/drain junction profile engineering, and use of heterojunction materials. Device and circuit simulation results will also be discussed. ©The Electrochemical Society. | Source Title: | ECS Transactions | URI: | http://scholarbank.nus.edu.sg/handle/10635/71872 | ISBN: | 9781566778251 | ISSN: | 19385862 | DOI: | 10.1149/1.3487536 |
| Appears in Collections: | Staff Publications |
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