Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2004.04.069
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dc.titleSimulation of 1.55 μm distributed feedback semiconductor laser: Investigation of dielectric grating yielding high coupling effect
dc.contributor.authorLow, K.S.
dc.contributor.authorTeng, J.H.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-06-19T03:27:41Z
dc.date.available2014-06-19T03:27:41Z
dc.date.issued2004-08-01
dc.identifier.citationLow, K.S., Teng, J.H., Chua, S.J. (2004-08-01). Simulation of 1.55 μm distributed feedback semiconductor laser: Investigation of dielectric grating yielding high coupling effect. Journal of Crystal Growth 268 (3-4 SPEC. ISS.) : 437-443. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.04.069
dc.identifier.issn00220248
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/71779
dc.description.abstractA novel dielectric grating for semiconductor distributed feedback laser was proposed. A five-layer model was developed to examine the effect of the dielectric grating based on Coupled Mode Theory. The large refractive index difference between dielectric material and InP yields much larger coupling coefficient and provides greater spatial flexibility in grating design and fabrication, resulting in improved efficiency of the gratings. © 2004 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jcrysgro.2004.04.069
dc.sourceScopus
dc.subjectA3. Selective growth
dc.subjectB1. Phosphides
dc.subjectB2. Dielectric materials
dc.subjectB2. Semiconducting III-V materials
dc.subjectB3. Distributed feedback semiconductor laser
dc.subjectB3. Laser diodes
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.jcrysgro.2004.04.069
dc.description.sourcetitleJournal of Crystal Growth
dc.description.volume268
dc.description.issue3-4 SPEC. ISS.
dc.description.page437-443
dc.description.codenJCRGA
dc.identifier.isiut000223087000020
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