Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0026-2692(01)00103-3
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dc.titleSiGe HBTs model converting technique from SGP to VBIC model
dc.contributor.authorLin, F.
dc.contributor.authorZhou, T.
dc.contributor.authorChen, B.
dc.contributor.authorOoi, B.L.
dc.contributor.authorKooi, P.S.
dc.date.accessioned2014-06-19T03:27:32Z
dc.date.available2014-06-19T03:27:32Z
dc.date.issued2002-01-02
dc.identifier.citationLin, F., Zhou, T., Chen, B., Ooi, B.L., Kooi, P.S. (2002-01-02). SiGe HBTs model converting technique from SGP to VBIC model. Microelectronics Journal 33 (1-2) : 45-54. ScholarBank@NUS Repository. https://doi.org/10.1016/S0026-2692(01)00103-3
dc.identifier.issn00262692
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/71765
dc.description.abstractA new parameter extraction methodology - local ratio evaluation is presented which is well suitable for converting one model to another. An example is given for VBIC model extraction by going through SPICE Gummel-Poon (SGP) model. It is based on the fact that VBIC model is a direct enhancement and extension of SGP model. First, the standard SGP model is extracted in the standard way. Next, SGP model parameters are directly converted to those in VBIC model. Local modifications are subsequently carried out for those parameters that are affected by different equations used in the two models. Finally, new model parameters for enhanced modeling features are introduced by evaluating the difference between measurement and simulation. © 2002 Elsevier Science Ltd. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0026-2692(01)00103-3
dc.sourceScopus
dc.subjectBipolar transistor modeling
dc.subjectCompact model
dc.subjectModel conversion
dc.subjectParameter extraction
dc.subjectSGP
dc.subjectSiGe HBT
dc.subjectVBIC
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/S0026-2692(01)00103-3
dc.description.sourcetitleMicroelectronics Journal
dc.description.volume33
dc.description.issue1-2
dc.description.page45-54
dc.description.codenMICEB
dc.identifier.isiut000173484000007
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