Please use this identifier to cite or link to this item:
|Title:||Schottky barrier tuning at NiSi/Si interface using pre-silicide aluminum and sulfur co-implant||Authors:||Tong, Y.
|Issue Date:||2010||Citation:||Tong, Y.,Koh, S.-M.,Zhou, Q.,Du, A.Y.,Yeo, Y.-C. (2010). Schottky barrier tuning at NiSi/Si interface using pre-silicide aluminum and sulfur co-implant. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings : 1021-1023. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2010.5667527||Abstract:||In this paper, we examine the physical properties of NiSi/p-Si implanted with various combinations of aluminum (Al) and sulfur (S) doses for Schottky barrier tuning. Techniques used included HRTEM, TOF-SIMS, HAADF STEM, and EDX. We also measured the integral interfacial dose (IID) of Al and S, i.e. amount of Al and S found with 2.5 nm of the interface, and correlated it to the Schottky barrier height (SBH). For the split with the same Al and S implant dose, the SBH tuning effect of Al overwhelms that of S and the extracted SBH is 0.137 eV. ©2010 IEEE.||Source Title:||ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/71717||ISBN:||9781424457984||DOI:||10.1109/ICSICT.2010.5667527|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 20, 2019
checked on Apr 21, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.