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|Title:||Real-time monitoring of photoresist thickness contour in microlithography||Authors:||Ho, W.K.
|Issue Date:||2006||Citation:||Ho, W.K.,Chen, X.,Wu, X.,Tay, A. (2006). Real-time monitoring of photoresist thickness contour in microlithography. IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings : 364-367. ScholarBank@NUS Repository. https://doi.org/10.1109/ISSM.2006.4493108||Abstract:||In microelectronics processing, coating of photoresist is a common process. It is important to ensure the uniformity of the photoresist thickness across the wafer. In this paper, we propose an insitu monitoring system. In the setup, a spectrometer is used to measure the photoresist thickness contour on the wafer after the spin-coat step or edge-bead removal step. The experimental results are compared with off-line ellipsometer measurements. The worst-case error is experimentally found to be less than 2%.||Source Title:||IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/71568||ISBN:||9784990413804||ISSN:||1523553X||DOI:||10.1109/ISSM.2006.4493108|
|Appears in Collections:||Staff Publications|
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