Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/71528
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dc.titlePulsed-laser deposition of TiNi shape memory alloy thin films
dc.contributor.authorChen, X.Y.
dc.contributor.authorLu, Y.F.
dc.contributor.authorRen, Z.M.
dc.contributor.authorZhang, L.
dc.contributor.authorWang, J.P.
dc.contributor.authorLiew, T.Y.F.
dc.date.accessioned2014-06-19T03:24:45Z
dc.date.available2014-06-19T03:24:45Z
dc.date.issued2001
dc.identifier.citationChen, X.Y.,Lu, Y.F.,Ren, Z.M.,Zhang, L.,Wang, J.P.,Liew, T.Y.F. (2001). Pulsed-laser deposition of TiNi shape memory alloy thin films. Materials Research Society Symposium - Proceedings 672 : O10.12.1-O10.12.6. ScholarBank@NUS Repository.
dc.identifier.issn02729172
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/71528
dc.description.abstractThin films of TiNi shape memory alloy (SMA) have been prepared by pulsed-laser deposition (PLD) at different substrate temperatures. The stoichiometry, crystallinity, and morphology of the deposited films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atom force microscopy (AFM). The transformation behavior and crystallization temperatures were investigated by differential scanning calorimetry (DSC). It is found that the Ni content of the deposited films ranges from 46.7 to 52.0 at.%. The crystallization temperature of the amorphous films is around 460°C. The activation energy of the crystallization process is determined by Kissinger's method to be 301 kJ/mol. The martensitic transformation temperature of the annealed Ti-51.5 at.% Ni film is -20.8°C.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleMaterials Research Society Symposium - Proceedings
dc.description.volume672
dc.description.pageO10.12.1-O10.12.6
dc.description.codenMRSPD
dc.identifier.isiutNOT_IN_WOS
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