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|Title:||P-type doping in GaN through Be implantation||Authors:||Feng, Z.C.
|Issue Date:||2005||Citation:||Feng, Z.C., Sun, Y.J., Tan, L.S., Chua, S.J., Yu, J.W., Yang, C.C., Lu, W., Collins, W.E. (2005). P-type doping in GaN through Be implantation. Physica Status Solidi C: Conferences 2 (7) : 2415-2419. ScholarBank@NUS Repository. https://doi.org/10.1002/pssc.200461458||Abstract:||P-type doping through Be implantation in GaN is achieved by a two-step annealing process. Combined photoluminescence-Raman measurements showed Be-related band, indicating a low acceptor ionization energy of 140 meV, and resonance Raman features. X-ray diffraction revealed the lattice expansion due to Be-implantation. Scanning electron microscopy exhibited the surface defects morphology with hexagonal plane like inverse open pyramids. The effect of new annealing process on Be activation is discussed. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.||Source Title:||Physica Status Solidi C: Conferences||URI:||http://scholarbank.nus.edu.sg/handle/10635/71525||ISSN:||16101634||DOI:||10.1002/pssc.200461458|
|Appears in Collections:||Staff Publications|
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