Please use this identifier to cite or link to this item:
DC FieldValue
dc.titleOptical transitions in InGaN/GaN quantum wells: Effects of the piezoelectric field
dc.contributor.authorZhang, X.H.
dc.contributor.authorLiu, W.
dc.contributor.authorChua, S.J.
dc.identifier.citationZhang, X.H., Liu, W., Chua, S.J. (2004-08-01). Optical transitions in InGaN/GaN quantum wells: Effects of the piezoelectric field. Journal of Crystal Growth 268 (3-4 SPEC. ISS.) : 521-526. ScholarBank@NUS Repository.
dc.description.abstractIn this paper, we present the results of photovoltage (PV), continuous wave (cw) and time-resolved photoluminescence (PL) measurements on a set of InGaN/GaN quantum wells (QWs) grown by metalorganic chemical vapor deposition on sapphire substrates. The energy difference between the absorption edge and PL peak increases with well width. The cw PL spectra exhibit blueshift with increasing excitation intensity and the blueshift drastically increases with the well width. The PL decay times in wider QWs are significantly longer than in narrower QWs. The PL decay times also decreases with increasing excitation intensity. It is found that the lattice-mismatch strain-induced piezoelectric field plays a important role in the optical transitions in InGaN/GaN QWs. © 2004 Elsevier B.V. All rights reserved.
dc.subjectA1. Photoluminescence
dc.subjectA1. Time-resolved photoluminescence
dc.subjectA3. Quantum wells
dc.subjectB1. Indium gallium nitride
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleJournal of Crystal Growth
dc.description.issue3-4 SPEC. ISS.
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.