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Title: Nanopatterning and selective area epitaxy of GaN on Si substrate
Authors: Wang, L.S.
Chua, S.J. 
Tripathy, S.
Zang, K.Y.
Wang, B.Z.
Teng, J.H.
Keywords: GaN on Si substrate
Micro-structural characterization
Optical spectroscopy
Selective area epitaxy
Issue Date: 2008
Citation: Wang, L.S., Chua, S.J., Tripathy, S., Zang, K.Y., Wang, B.Z., Teng, J.H. (2008). Nanopatterning and selective area epitaxy of GaN on Si substrate. Proceedings of SPIE - The International Society for Optical Engineering 6894 : -. ScholarBank@NUS Repository.
Abstract: Due to lack of suitable lattice matched substrates, III-Nitride materials are usually grown on sapphire, SiC, and silicon. The heteroepitaxy of GaN on these substrates often incorporates a high density of dislocation and point defects due to lattice and thermal mismatch. It is desirable to reduce the defect density in III-Nitrides in order to fabricate longer lifetime and high brightness light emitting diodes, lasers, and high-electron mobility transistors. In this context, nano-scale epitaxy on patterned Si substrates allows lateral growth, which eventually leads to a reduction of defect density and strain in the overgrown GaN films. Large area nano-patterning with dielectric masks would also be useful to fabricate highly-ordered and dense nitride nanostructures by selective area homo- and hetero-epitaxy.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
ISBN: 9780819470690
ISSN: 0277786X
DOI: 10.1117/12.762149
Appears in Collections:Staff Publications

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