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|Title:||Nanometer scale spintronic sensors and memories||Authors:||Zheng, Y.
|Issue Date:||2004||Citation:||Zheng, Y.,Li, K.,Han, G.,Qiu, J.,Guo, Z.,Wu, Y. (2004). Nanometer scale spintronic sensors and memories. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 1 : 752-755. ScholarBank@NUS Repository.||Abstract:||Nanometer scale spintronics for data storage applications in both hard disk drive and non-volatile memory are introduced. For the hard disk drive applications, we have developed all-metal GMR sensors with an MR of 18%. A reader with a track width of 109nm is also fabricated. Linear and noise-free output signal has been achieved. For non-volatile memory applications, an MTJ MRAM with switch-free, two-line structure and a peripheral circuitry is presented. The shunting effect has been effectively reduced in this structure; the signal is maintained at original level even without the requirement of a transistor or a diode. The additional digital line to write the cell is removed without affecting the writing performance. ©2004 IEEE.||Source Title:||International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT||URI:||http://scholarbank.nus.edu.sg/handle/10635/71087|
|Appears in Collections:||Staff Publications|
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