Please use this identifier to cite or link to this item:
Title: Nanometer scale spintronic sensors and memories
Authors: Zheng, Y.
Li, K.
Han, G.
Qiu, J.
Guo, Z.
Wu, Y. 
Issue Date: 2004
Citation: Zheng, Y.,Li, K.,Han, G.,Qiu, J.,Guo, Z.,Wu, Y. (2004). Nanometer scale spintronic sensors and memories. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 1 : 752-755. ScholarBank@NUS Repository.
Abstract: Nanometer scale spintronics for data storage applications in both hard disk drive and non-volatile memory are introduced. For the hard disk drive applications, we have developed all-metal GMR sensors with an MR of 18%. A reader with a track width of 109nm is also fabricated. Linear and noise-free output signal has been achieved. For non-volatile memory applications, an MTJ MRAM with switch-free, two-line structure and a peripheral circuitry is presented. The shunting effect has been effectively reduced in this structure; the signal is maintained at original level even without the requirement of a transistor or a diode. The additional digital line to write the cell is removed without affecting the writing performance. ©2004 IEEE.
Source Title: International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on May 18, 2019

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.