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Title: Nanometer scale spintronic sensors and memories
Authors: Zheng, Y.
Li, K.
Han, G.
Qiu, J.
Guo, Z.
Wu, Y. 
Issue Date: 2004
Citation: Zheng, Y.,Li, K.,Han, G.,Qiu, J.,Guo, Z.,Wu, Y. (2004). Nanometer scale spintronic sensors and memories. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 1 : 752-755. ScholarBank@NUS Repository.
Abstract: Nanometer scale spintronics for data storage applications in both hard disk drive and non-volatile memory are introduced. For the hard disk drive applications, we have developed all-metal GMR sensors with an MR of 18%. A reader with a track width of 109nm is also fabricated. Linear and noise-free output signal has been achieved. For non-volatile memory applications, an MTJ MRAM with switch-free, two-line structure and a peripheral circuitry is presented. The shunting effect has been effectively reduced in this structure; the signal is maintained at original level even without the requirement of a transistor or a diode. The additional digital line to write the cell is removed without affecting the writing performance. ©2004 IEEE.
Source Title: International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
Appears in Collections:Staff Publications

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