Please use this identifier to cite or link to this item:
https://doi.org/10.1109/IEDM.2009.5424306
DC Field | Value | |
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dc.title | Modeling of stress-retarded orientation-dependent oxidation: Shape engineering of silicon nanowire channels | |
dc.contributor.author | Ma, F.-J. | |
dc.contributor.author | Rustagi, S.C. | |
dc.contributor.author | Zhao, H. | |
dc.contributor.author | Samudra, G.S. | |
dc.contributor.author | Singh, N. | |
dc.contributor.author | Budhaaraju, K.D. | |
dc.contributor.author | Lo, G.Q. | |
dc.contributor.author | Kwong, D.L. | |
dc.date.accessioned | 2014-06-19T03:18:41Z | |
dc.date.available | 2014-06-19T03:18:41Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | Ma, F.-J.,Rustagi, S.C.,Zhao, H.,Samudra, G.S.,Singh, N.,Budhaaraju, K.D.,Lo, G.Q.,Kwong, D.L. (2009). Modeling of stress-retarded orientation-dependent oxidation: Shape engineering of silicon nanowire channels. Technical Digest - International Electron Devices Meeting, IEDM : 21.5.1-21.5.4. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2009.5424306" target="_blank">https://doi.org/10.1109/IEDM.2009.5424306</a> | |
dc.identifier.isbn | 9781424456406 | |
dc.identifier.issn | 01631918 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/70997 | |
dc.description.abstract | A new universal stress retardation parameter set is successful to account for initial oxidation rate enhancement, orientation-dependent retardation and self-limiting phenomena observed in the dry oxidation experiment of the silicon FIN nanostructures over a wide temperature range. This stressretarded orientation-dependent model was proved to be trustworthy in shape engineering of silicon nanowire channels. © 2009 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IEDM.2009.5424306 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/IEDM.2009.5424306 | |
dc.description.sourcetitle | Technical Digest - International Electron Devices Meeting, IEDM | |
dc.description.page | 21.5.1-21.5.4 | |
dc.description.coden | TDIMD | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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