Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2009.5424306
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dc.titleModeling of stress-retarded orientation-dependent oxidation: Shape engineering of silicon nanowire channels
dc.contributor.authorMa, F.-J.
dc.contributor.authorRustagi, S.C.
dc.contributor.authorZhao, H.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorSingh, N.
dc.contributor.authorBudhaaraju, K.D.
dc.contributor.authorLo, G.Q.
dc.contributor.authorKwong, D.L.
dc.date.accessioned2014-06-19T03:18:41Z
dc.date.available2014-06-19T03:18:41Z
dc.date.issued2009
dc.identifier.citationMa, F.-J.,Rustagi, S.C.,Zhao, H.,Samudra, G.S.,Singh, N.,Budhaaraju, K.D.,Lo, G.Q.,Kwong, D.L. (2009). Modeling of stress-retarded orientation-dependent oxidation: Shape engineering of silicon nanowire channels. Technical Digest - International Electron Devices Meeting, IEDM : 21.5.1-21.5.4. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2009.5424306" target="_blank">https://doi.org/10.1109/IEDM.2009.5424306</a>
dc.identifier.isbn9781424456406
dc.identifier.issn01631918
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70997
dc.description.abstractA new universal stress retardation parameter set is successful to account for initial oxidation rate enhancement, orientation-dependent retardation and self-limiting phenomena observed in the dry oxidation experiment of the silicon FIN nanostructures over a wide temperature range. This stressretarded orientation-dependent model was proved to be trustworthy in shape engineering of silicon nanowire channels. © 2009 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IEDM.2009.5424306
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/IEDM.2009.5424306
dc.description.sourcetitleTechnical Digest - International Electron Devices Meeting, IEDM
dc.description.page21.5.1-21.5.4
dc.description.codenTDIMD
dc.identifier.isiutNOT_IN_WOS
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