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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/70995
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dc.titleModeling of radiation resistance of 60 GHz on-chip dipole
dc.contributor.authorDeng, T.
dc.contributor.authorZhang, Y.
dc.contributor.authorGuo, Y.
dc.date.accessioned2014-06-19T03:18:40Z
dc.date.available2014-06-19T03:18:40Z
dc.date.issued2011
dc.identifier.citationDeng, T.,Zhang, Y.,Guo, Y. (2011). Modeling of radiation resistance of 60 GHz on-chip dipole. Asia-Pacific Microwave Conference Proceedings, APMC : 457-460. ScholarBank@NUS Repository.
dc.identifier.isbn9780858259744
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70995
dc.description.abstractIn this paper, the formula of radiation resistance of 60 GHz on-chip dipole is proposed. Three empirical factors involving the effects of passivation layer, lossy silicon substrate and the radiation of surface wave are extracted and expressed into close-form formulas. The accuracy error of the amended formula is less than 5%. © 2011 Engineers Australia.
dc.sourceScopus
dc.subjecton-chip dipole
dc.subjectpassivation layer
dc.subjectradiation resistance
dc.subjectsilicon substrate
dc.subjectsurface wave
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleAsia-Pacific Microwave Conference Proceedings, APMC
dc.description.page457-460
dc.identifier.isiutNOT_IN_WOS
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