Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/70936
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dc.titleMicrowave coplanar filters on Si substrates
dc.contributor.authorChan, K.T.
dc.contributor.authorChin, A.
dc.contributor.authorKuo, J.T.
dc.contributor.authorChang, C.Y.
dc.contributor.authorDuh, D.S.
dc.contributor.authorLin, W.J.
dc.contributor.authorZhu, C.
dc.contributor.authorLi, M.F.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-06-19T03:17:58Z
dc.date.available2014-06-19T03:17:58Z
dc.date.issued2003
dc.identifier.citationChan, K.T.,Chin, A.,Kuo, J.T.,Chang, C.Y.,Duh, D.S.,Lin, W.J.,Zhu, C.,Li, M.F.,Kwong, D.-L. (2003). Microwave coplanar filters on Si substrates. IEEE MTT-S International Microwave Symposium Digest 3 : 1909-1912. ScholarBank@NUS Repository.
dc.identifier.issn0149645X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70936
dc.description.abstractThe excellent RF performance for band-pass and band-stop microwave coplanar filters at 22∼94 GHz on silicon substrates was achieved using an optimized proton implantation process. The implantation process was optimized for better compatibility with VLSI process. The equivalent circuit model was further used to analyze the substrate loss effects of the band pass filter.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleIEEE MTT-S International Microwave Symposium Digest
dc.description.volume3
dc.description.page1909-1912
dc.description.codenIMIDD
dc.identifier.isiutNOT_IN_WOS
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