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|Title:||Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth||Authors:||Guo, Z.B.
|Issue Date:||2002||Citation:||Guo, Z.B.,Li, K.B.,Han, G.C.,Liu, Z.Y.,Luo, P.,Wu, Y.H. (2002). Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth. Digests of the Intermag Conference : ET10-. ScholarBank@NUS Repository.||Abstract:||Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth were analyzed. The detailed studies of exchange bias and magnetization reversal behaviors in the patterned sample with 3.5nm thick FeMn layer left in etched areas were performed. The origin of the phenomenon was attributed to the presence of antiferromagnetic domain walls by magnetization reversal in patterned sample.||Source Title:||Digests of the Intermag Conference||URI:||http://scholarbank.nus.edu.sg/handle/10635/70862||ISSN:||00746843|
|Appears in Collections:||Staff Publications|
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