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| Title: | Localization of Cu/low-k interconnect reliability defects by pulsed laser induced technique | Authors: | Tan, T.L. Quah, A.C.T. Gan, C.L. Phang, J.C.H. Chua, C.M. Ng, C.M. Du, A.-Y. |
Issue Date: | 2007 | Citation: | Tan, T.L.,Quah, A.C.T.,Gan, C.L.,Phang, J.C.H.,Chua, C.M.,Ng, C.M.,Du, A.-Y. (2007). Localization of Cu/low-k interconnect reliability defects by pulsed laser induced technique. Conference Proceedings from the International Symposium for Testing and Failure Analysis : 156-160. ScholarBank@NUS Repository. | Abstract: | In this paper, the application of pulsed-TIVA for the localization of Cu/low-k: interconnect reliability defects in comb test structures is described. Two types of subtle dielectric defects which are otherwise not detectable with conventional TIVA can be detected with pulsed-TIVA. Copyright © 2007 ASM International® All rights reserved. | Source Title: | Conference Proceedings from the International Symposium for Testing and Failure Analysis | URI: | http://scholarbank.nus.edu.sg/handle/10635/70818 | ISBN: | 0871708639 |
| Appears in Collections: | Staff Publications |
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