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|Title:||Localization of Cu/low-k interconnect reliability defects by pulsed laser induced technique||Authors:||Tan, T.L.
|Issue Date:||2007||Citation:||Tan, T.L.,Quah, A.C.T.,Gan, C.L.,Phang, J.C.H.,Chua, C.M.,Ng, C.M.,Du, A.-Y. (2007). Localization of Cu/low-k interconnect reliability defects by pulsed laser induced technique. Conference Proceedings from the International Symposium for Testing and Failure Analysis : 156-160. ScholarBank@NUS Repository.||Abstract:||In this paper, the application of pulsed-TIVA for the localization of Cu/low-k: interconnect reliability defects in comb test structures is described. Two types of subtle dielectric defects which are otherwise not detectable with conventional TIVA can be detected with pulsed-TIVA. Copyright © 2007 ASM International® All rights reserved.||Source Title:||Conference Proceedings from the International Symposium for Testing and Failure Analysis||URI:||http://scholarbank.nus.edu.sg/handle/10635/70818||ISBN:||0871708639|
|Appears in Collections:||Staff Publications|
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