Please use this identifier to cite or link to this item:
https://doi.org/10.1109/PVSC.2011.6186392
DC Field | Value | |
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dc.title | Laser assisted boron doping of silicon wafer solar cells using nanosecond and picosecond laser pulses | |
dc.contributor.author | Palina, N. | |
dc.contributor.author | Mueller, T. | |
dc.contributor.author | Mohanti, S. | |
dc.contributor.author | Aberle, A.G. | |
dc.date.accessioned | 2014-06-19T03:15:52Z | |
dc.date.available | 2014-06-19T03:15:52Z | |
dc.date.issued | 2011 | |
dc.identifier.citation | Palina, N.,Mueller, T.,Mohanti, S.,Aberle, A.G. (2011). Laser assisted boron doping of silicon wafer solar cells using nanosecond and picosecond laser pulses. Conference Record of the IEEE Photovoltaic Specialists Conference : 002193-002197. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/PVSC.2011.6186392" target="_blank">https://doi.org/10.1109/PVSC.2011.6186392</a> | |
dc.identifier.isbn | 9781424499656 | |
dc.identifier.issn | 01608371 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/70758 | |
dc.description.abstract | In this paper, laser-assisted boron doping of planar and textured silicon wafers is investigated and optimized. Two laser types - a ns laser and a ps laser - are used, both operating at 532 nm. The following laser parameters are varied: pulse energy, repetition rate and laser scribing speed. The boron sources are commercially available spin-on dopant sources. The ps laser gives not satisfactory sheet resistance results and is thus not suitable for creating heavily doped p-type layers using the laser doping approach. In contrast, the ns laser is able to controllably realize heavily doped p-type profiles with desired sheet resistance value of below 100 Ohms/square. On planar surfaces, we realize profiles with a depth of about 0.5-2 μm. Interestingly, on textured samples, the heavily doped profile is found to be much thicker (about 3-5 μm). © 2011 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/PVSC.2011.6186392 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/PVSC.2011.6186392 | |
dc.description.sourcetitle | Conference Record of the IEEE Photovoltaic Specialists Conference | |
dc.description.page | 002193-002197 | |
dc.description.coden | CRCND | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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