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|Title:||Laser assisted boron doping of silicon wafer solar cells using nanosecond and picosecond laser pulses||Authors:||Palina, N.
|Issue Date:||2011||Citation:||Palina, N.,Mueller, T.,Mohanti, S.,Aberle, A.G. (2011). Laser assisted boron doping of silicon wafer solar cells using nanosecond and picosecond laser pulses. Conference Record of the IEEE Photovoltaic Specialists Conference : 002193-002197. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2011.6186392||Abstract:||In this paper, laser-assisted boron doping of planar and textured silicon wafers is investigated and optimized. Two laser types - a ns laser and a ps laser - are used, both operating at 532 nm. The following laser parameters are varied: pulse energy, repetition rate and laser scribing speed. The boron sources are commercially available spin-on dopant sources. The ps laser gives not satisfactory sheet resistance results and is thus not suitable for creating heavily doped p-type layers using the laser doping approach. In contrast, the ns laser is able to controllably realize heavily doped p-type profiles with desired sheet resistance value of below 100 Ohms/square. On planar surfaces, we realize profiles with a depth of about 0.5-2 μm. Interestingly, on textured samples, the heavily doped profile is found to be much thicker (about 3-5 μm). © 2011 IEEE.||Source Title:||Conference Record of the IEEE Photovoltaic Specialists Conference||URI:||http://scholarbank.nus.edu.sg/handle/10635/70758||ISBN:||9781424499656||ISSN:||01608371||DOI:||10.1109/PVSC.2011.6186392|
|Appears in Collections:||Staff Publications|
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