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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/70753
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dc.titleLarge signal bias-dependent modeling of PHEMTs by pulsed measurements
dc.contributor.authorOoi, B.L.
dc.contributor.authorLan, K.
dc.contributor.authorLeong, M.S.
dc.contributor.authorKooi, K.S.
dc.date.accessioned2014-06-19T03:15:49Z
dc.date.available2014-06-19T03:15:49Z
dc.date.issued2001
dc.identifier.citationOoi, B.L.,Lan, K.,Leong, M.S.,Kooi, K.S. (2001). Large signal bias-dependent modeling of PHEMTs by pulsed measurements. IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers : 155-157. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70753
dc.description.abstractA bias-dependent large signal model and corresponding parameter extraction procedures are presented to characterize PHEMT transistors by pulsed measurements. Two nonlinear current sources and few additional parameters are used to model bias-dependence of the drain current. Results show that the method discussed in this letter can be applied to model the large signal behavior of PHEMTs from DC to RF at any bias points.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleIEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
dc.description.page155-157
dc.identifier.isiutNOT_IN_WOS
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