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Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICSICT.2008.4734611
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dc.titleIssues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics
dc.contributor.authorLi, M.-F.
dc.contributor.authorHuang, D.
dc.contributor.authorWJLiu
dc.contributor.authorZYLiu
dc.contributor.authorLuo, Y.
dc.contributor.authorCCLiao
dc.contributor.authorLFZhang
dc.contributor.authorZHGan
dc.contributor.authorWong, W.
dc.date.accessioned2014-06-19T03:15:15Z
dc.date.available2014-06-19T03:15:15Z
dc.date.issued2008
dc.identifier.citationLi, M.-F., Huang, D., WJLiu, ZYLiu, Luo, Y., CCLiao, LFZhang, ZHGan, Wong, W. (2008). Issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT : 604-607. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2008.4734611
dc.identifier.isbn9781424421855
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70704
dc.description.abstractSome issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics are summarized. The resolutions of these issues from our point of view are illustrated. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ICSICT.2008.4734611
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/ICSICT.2008.4734611
dc.description.sourcetitleInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
dc.description.page604-607
dc.identifier.isiut000255151700111
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