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|Title:||Investigation of millimeter-wave GaN HEMTs and a quick small-signal modeling method||Authors:||Zhong, Z.
|Issue Date:||2012||Citation:||Zhong, Z.,Guo, Y.-X.,Zhou, J.,Chen, C. (2012). Investigation of millimeter-wave GaN HEMTs and a quick small-signal modeling method. IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding : 163-166. ScholarBank@NUS Repository. https://doi.org/10.1109/IMWS2.2012.6338238||Abstract:||Recently, wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to RF/microwave transmitters for communications and radar systems. Of the various wide bandgap materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to investigate the status of updated GaN HEMTs technology with a view of highlighting both the progress and prospects. Besides, a quick small-signal modeling method has been presented for instant MMIC designs. © 2012 IEEE.||Source Title:||IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding||URI:||http://scholarbank.nus.edu.sg/handle/10635/70681||ISBN:||9781467309028||DOI:||10.1109/IMWS2.2012.6338238|
|Appears in Collections:||Staff Publications|
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