Investigation of millimeter-wave GaN HEMTs and a quick small-signal modeling method

Abstract

Recently, wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to RF/microwave transmitters for communications and radar systems. Of the various wide bandgap materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to investigate the status of updated GaN HEMTs technology with a view of highlighting both the progress and prospects. Besides, a quick small-signal modeling method has been presented for instant MMIC designs. © 2012 IEEE.