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|Title:||In-situ monitoring of photoresist thickness contour||Authors:||Ho, W.K.
|Issue Date:||2007||Citation:||Ho, W.K.,Wu, X.,Tay, A.,Chen, X. (2007). In-situ monitoring of photoresist thickness contour. 2006 IEEE International Conference on Industrial Informatics, INDIN'06 : 1091-1095. ScholarBank@NUS Repository. https://doi.org/10.1109/INDIN.2006.275769||Abstract:||In microelectronics processing, coating of photoresist is a common process. It is important to ensure the uniformity of the photoresist thickness across the wafer. In this paper, we propose an in-situ monitoring system. In the setup, a spectrometer is used to measure the photoresist thickness contour on the wafer after the spin-coat step or edge-bead removal step. The experimental results are compared with off-line ellipsometer measurements. The worst-case error is experimentally found to be less than 2%. © 2006 IEEE.||Source Title:||2006 IEEE International Conference on Industrial Informatics, INDIN'06||URI:||http://scholarbank.nus.edu.sg/handle/10635/70611||ISBN:||0780397010||DOI:||10.1109/INDIN.2006.275769|
|Appears in Collections:||Staff Publications|
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