Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.711493
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dc.titleInfluence of wafer warpage on photoresist film thickness and extinction coefficient measurements
dc.contributor.authorWu, X.
dc.contributor.authorTay, A.
dc.date.accessioned2014-06-19T03:13:55Z
dc.date.available2014-06-19T03:13:55Z
dc.date.issued2007
dc.identifier.citationWu, X., Tay, A. (2007). Influence of wafer warpage on photoresist film thickness and extinction coefficient measurements. Proceedings of SPIE - The International Society for Optical Engineering 6518 (PART 3) : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.711493
dc.identifier.isbn0819466379
dc.identifier.issn0277786X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70592
dc.description.abstractPhotoresist film thickness and extinction coefficient are two important properties which has an impact on critical dimension (CD). Current approaches for estimating these resist film properties are based on the assumption of a flat wafer. However, wafer warpage is common in microelectronics processing. In this paper, the effect of wafer warpage on the accuracy of resist properties estimation is investigated and an in-situ calibration method is proposed. Based on the proposed approach, we demonstrate how wafer warpage can be detected in real-time using conventional reflectometers during the thermal processing steps in lithography.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1117/12.711493
dc.sourceScopus
dc.subjectLithography
dc.subjectPhotoresist processing
dc.subjectWafer warpage
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1117/12.711493
dc.description.sourcetitleProceedings of SPIE - The International Society for Optical Engineering
dc.description.volume6518
dc.description.issuePART 3
dc.description.page-
dc.description.codenPSISD
dc.identifier.isiut000247393800146
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